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BUZ11AL 数据表(PDF) 6 Page - Siemens Semiconductor Group |
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BUZ11AL 数据表(HTML) 6 Page - Siemens Semiconductor Group |
6 / 9 page Semiconductor Group 6 07/96 BUZ 11 AL Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0.0 1.0 2.0 3.0 4.0 V 5.5 V DS 0 5 10 15 20 25 30 35 40 45 50 A 60 I D V GS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l Ptot = 75W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0 5 10 15 20 25 30 35 40 A 50 I D 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 Ω 0.17 R DS (on) VGS [V] = a 2.5 VGS [V] = a 3.0 VGS [V] = a a 3.5 b b 4.0 c c 4.5 d d 5.0 e e 5.5 f f 6.0 g g 6.5 h h 7.0 i i 8.0 j j 10.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0 5 10 15 20 25 30 35 40 45 50 55 A 65 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0 10 20 30 40 A 60 I D 0 4 8 12 16 20 24 S 32 g fs |
类似零件编号 - BUZ11AL |
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类似说明 - BUZ11AL |
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