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BUZ100L 数据表(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ100L 数据表(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 07/96 BUZ 100L Avalanche energy E AS = ƒ(Tj) parameter: ID = 60 A, VDD = 25 V R GS = 25 Ω, L = 70 µH 20 40 60 80 100 120 140 °C 180 T j 0 20 40 60 80 100 120 140 160 180 200 220 mJ 260 E AS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 90 A 0 20 40 60 80 100 120 nC 160 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 180 T j 47 48 49 50 51 52 53 54 55 56 57 58 59 60 V 62 V (BR)DSS |
类似零件编号 - BUZ100L |
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类似说明 - BUZ100L |
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