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2N5061 数据表(PDF) 1 Page - Central Semiconductor Corp

部件名 2N5061
功能描述  SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS
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制造商  CENTRAL [Central Semiconductor Corp]
网页  http://www.centralsemi.com
标志 CENTRAL - Central Semiconductor Corp

2N5061 数据表(HTML) 1 Page - Central Semiconductor Corp

  2N5061 Datasheet HTML 1Page - Central Semiconductor Corp 2N5061 Datasheet HTML 2Page - Central Semiconductor Corp  
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2N5060 THRU 2N5064
SILICON CONTROLLED RECTIFIERS
0.8 AMP, 30 THRU 200 VOLT
The CENTRAL SEMICONDUCTOR 2N5060 series
devices are epoxy molded SCRs designed for control
systems and sensing circuit applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
2N5060 2N5061 2N5062 2N5063 2N5064 UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
30
60
100
150
200
V
RMS On-State Current (Note 1; TC=80°C)
IT(RMS)
0.8
A
Average On-State Current (Note 1; TC=67°C)
IT(AV)
0.51
A
Average On-State Current (Note 1; TC=102°C)
IT(AV)
0.255
A
Peak One Cycle Surge Current (60Hz)
ITSM
10
A
I2t Value for Fusing (t=8.3ms)
I2t
0.4
A2s
Peak Forward Gate Power (tp<1.0μs)
PGM
0.1
W
Average Forward Gate Power (t=8.3ms)
PG(AV)
0.01
W
Peak Forward Gate Current (tp<1.0μs)
IGM
1.0
A
Peak Reverse Gate Voltage (tp<1.0μs)
VRGM
5.0
V
Operating Junction Temperature
TJ
-40 to +125
°C
Storage Temperature
Tstg
-40 to +150
°C
Thermal Resistance (Note 2)
ΘJC
75
°C/W
Thermal Resistance
ΘJA
200
°C/W
Notes: 1) 180° Conduction Angles
2) Measured with the “flat side down” on a heatsink and held in position by a metal clamp over the curved surface.
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ
10
μA
IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ, TC=110°C
50
μA
IGT
VD=7.0V, RL=100Ω
200
μA
IGT
VD=7.0V, RL=100Ω, TC=-40°C
350
μA
IH
Initiating Current, IT=20mA, RGK=1.0kΩ
5.0
mA
IH
Initiating Current, IT=20mA, RGK=1.0kΩ, TC=-40°C
10
mA
VGT
VD=7.0V, RL=100Ω
0.8
V
VGT
VD=7.0V, RL=100Ω, TC=-40°C
1.2
V
VGD
VD=Rated VDRM, RL=100Ω, TC=110°C
0.1
V
VTM
ITM=1.2A, TA=25°C
1.7
V
dv/dt
VD=Rated VDRM, RGK=1.0kΩ
30
V/μs
TO-92 CASE
R5 (7-May 2015)
www.centr a lsemi.com


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