BCX19_11 datasheet(1/3 Pages) ROHM

部件名	BCX19

功能描述	NPN small signal transistor

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制造商	ROHM [Rohm]

网页	http://www.rohm.com

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2011.09 - Rev.B

NPN small signal transistor

BCX19



Features



Dimensions (Unit : mm)

(1) High gain and low saturation voltage.

(2) Complements the BCX17.



Packaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

BCX19

T116

3000

Type



Absolute maximum ratings (Ta=25

C)

Collector-emitter voltage (VBE=0)

Collector-emitter voltage (open base)

Emitter-base voltage

Collector current

Collector current (peak value)

Collector power dissipation

Junction temperature

Storage temperature

∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE

∗2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE

Parameter

VCES

VCEO

VEBO

PC

Tj

Tstg

50

V

A

°C

45

5

0.5

IC

ICM

A

1

∗

0.2

0.35

W

150

−65 to 150

Symbol

Limits

Unit

∗2

0.425

W



Electrical characteristics (Ta=25

C)

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cutoff current

Emitter-base cutoff current

Collector-emitter saturation voltage

Base-emitter voltage

DC current transfer ratio

Collector-base cutoff current

Parameter

Symbol

BVCES

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE

fT

ICBO

Min.

50

45

5

−

100

70

−

250

−

0.1

10

0.62

600

−−

−

5

VIC

= 50

μA

IC

= 10mA

IE

= 50

μA

VCB

= 20V

VEB

= 5V

IC/IB

= 500mA/ 50mA

VCE

= 1V, IC= 100mA

VCE

= 1V, IC= 300mA

VCE

= 5V, IE= 20mA, f=100MHz

VCB

= 20V, Ta=150

°C

V

μA

V

−

MHz

μA

Typ.

Max.

Unit

Conditions

VBE(on)

−

1.2

VCE

= 1V, IC= 500mA

V

40

−−

VCE

= 1V, IC= 500mA

Transition frequency

Each lead has same dimensions

(1)Emitter

(2)Base

(3)Collector

BCX19

0.45

0.95

0.15

2.9

0.95

(1)

(3)

0.95

(2)

1.9

0.4

Abbreviated symbol : GU1

类似零件编号 - BCX19_11

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