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Document Number: 93170

6

Revision: 08-Apr-08

SD203N/R Series

Vishay High Power Products

Fast Recovery Diodes

(Stud Version), 200 A

Fig. 12 - Recovery Current Characteristics

Fig. 13 - Recovery Time Characteristics

Fig. 14 - Recovery Charge Characteristics

Fig. 15 - Recovery Current Characteristics

Fig. 16 - Recovery Time Characteristics

Fig. 17 - Recovery Charge Characteristics

20

30

40

50

60

70

80

90

100

20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/ dt (A/ µs)

400 A

200 A

I

= 750 A

Square Pulse

FM

SD203N/ R..S10 Series

T = 125 °C, V = 30V

J

r

1.6

2

2.4

2.8

3.2

3.6

0

0

1

0

1

Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs)

400 A

200 A

I

= 750 A

Sq ua re Pulse

FM

SD203N/ R..S15 Series

T = 125 °C, V = 30V

r

J

50

60

70

80

90

100

110

120

130

140

150

160

170

10 20 30 40 50 60 70 80 90 100

Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/µs)

400 A

200 A

I

= 750 A

Squa re Pulse

FM

SD203N/ R..S15 Series

T = 125 °C, V = 30V

J

r

10

20

30

40

50

60

70

80

90

100

110

120

130

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/ dt (A/ µs)

400 A

200 A

I

= 750 A

Square Pulse

FM

SD203N/ R..S15 Series

T = 125 °C, V = 30V

J

r

2.4

2.6

2.8

3

3.2

3.4

3.6

0

0

1

0

1

Ra te Of Fa ll Of Forward Current - di/d t (A/ µs)

400 A

200 A

I

= 750 A

Sq ua re Pulse

FM

SD203N/ R..S20 Series

T = 125 °C, V = 30V

J

r

50

100

150

200

250

300

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/ dt (A/ µs)

400 A

200 A

I

= 750 A

Sq ua re Pulse

FM

SD203N/ R..S20 Series

T = 125 °C, V = 30V

J

r