BAS16D-V_12 datasheet(2/5 Pages) VISHAY

部件名	BAS16D-V

功能描述	Small Signal Fast Switching Diode

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Document Number 85723

Rev. 1.3, 17-Aug-10

BAS16D-V

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided electrodes are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid provided electrodes are kept at ambient temperature

Typical Characteristics

Tamb = 25 °C unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Maximum junction temperature

Tj

150

°C

Storage temperature

Tstg

- 65 to 1501)

°C

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 1 mA

VF

715

mV

IF = 10 mA

VF

855

mV

IF = 50 mA

VF

1V

IF = 150 mA

VF

1.25

V

Leakage current

VR = 25 V, TJ = 150 °C

IR

30

μA

VR = 75 V

IR

1

μA

VR = 75 V, TJ = 150 °C

IR

50

μA

Diode capacitance

VR = 0; f = 1 MHz

CD

2pF

Reverse recovery time

IF = 10 mA to IR = 10 mA,

IR = 1 mA, RL = 100 Ω

trr

6ns

Thermal resistance junction to

ambient air

RthJA

3751)

°C/W

Figure 1. Forward characteristics

18105

VF (V)

T

j = 100 °C

T

j = 25 °C

10- 2

10- 1

102

103

1

10

12

0

Figure 2. Dynamic Forward Resistance vs. Forward Current

17438

f = 1 kHz

T

j = 25 °C

IF (mA)

10

102

103

104

10-2

10-1

1102

10

2

5

2

5

2

5

2

5

类似零件编号 - BAS16D-V_12

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类似说明 - BAS16D-V_12

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