BFY196 datasheet(2/5 Pages) SIEMENS

部件名	BFY196

功能描述	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)

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制造商	SIEMENS [Siemens Semiconductor Group]

网页	http://www.siemens.com/

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2 / 5 page

BFY 196

Semiconductor Group

2

Draft A03 1998-04-01

Electrical Characteristics

3)

This test assures

V

(BR)CE0 > 12 V.

Table 2

DC Characteristics at

T

A = 25 °C unless otherwise specified

Parameter

Symbol

Limit Values

Unit

min.

typ.

max.

Collector-base cutoff current

V

CB = 20 V, IE = 0

I

CBO

--

100

mA

Collector-emitter cutoff current

V

CE = 12 V, IB = 1 mA

3)

I

CEX

--

1000

mA

Collector-base cutoff current

V

CB = 10 V, IE = 0

I

CBO

--

50

nA

Emitter-base cutoff current

V

EB = 2 V, IC = 0

I

EBO

--

25

mA

Emitter-base cutoff current

V

EB = 1 V, IC = 0

I

EBO

--

0.5

mA

Base-emitter forward voltage

I

E = 50 mA, IC = 0

V

FBE

--

1V

DC current gain

I

C = 50 mA, VCE = 8 V

h

FE

50

100

175

-

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