ES1J datasheet(1/3 Pages) HTSEMI

部件名	ES1J

功能描述	1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts

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制造商	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

网页	http://www.htsemi.com

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ES1A THRU ES1M

1 Amp Super Fast

Recovery

Silicon Rectifier

50 to 1000 Volts

DO-214AC

(SMAJ) (High Profile)

Features

• For Surface Mount Applications

• Extremely Low Thermal Resistance

• Easy Pick And Place

• High Temp Soldering: 250°C for 10 Seconds At Terminals

• Superfast Recovery Times For High Efficiency

Maximum Ratings

0.070”

0.090”

0.085”

SUGGESTED SOLDER

PAD LAYOUT

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

IF(AV)

1.0A

TJ = 75

°C

Peak Forward Surge

Current

IFSM

30A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

VF

IFM = 1.0A;

TJ = 25

°C*

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

IR

5

µA

100

µA

TJ = 25

°C

TJ = 100

°C

Typical Junction

Capacitance

CJ

45pF

Measured at

1.0MHz, VR=4.0V

*Pulse test: Pulse width 200

µsec, Duty cycle 2%

•

Operating Temperature: -50

°C to +150°C

•

Storage Temperature: -50

°C to +150°C

•

Maximum Thermal Resistance; 15

°C/W Junction To Lead

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

Maximum

RMS

Voltage

Maximum

DC

Blocking

Voltage

ES1M

1000V

700V

1000V

ES1A

50V

35V

50V

ES1B

100V

70V

100V

ES1C

150V

105V

150V

ES1D

200V

140V

200V

ES1G

400V

280V

400V

ES1J

600V

420V

600V

ES1K

800V

560V

800V

Maximum Reverse

Recovery Time

Trr

IF=0.5A, IR=1.0A,

Irr=0.25A

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.078

.116

1.98

2.95

B

.067

.089

1.70

2.25

C

.002

.008

.05

.20

D

---

.02

---

.51

E

.035

.055

.89

1.40

F

.065

.096

1.65

2.45

G

.205

.224

5.21

5.69

H

.160

.180

4.06

4.57

J

.100

.112

2.57

2.84

H

J

E

F

G

A

B

D

C

Cathode Band

ES1A-D

50ns

ES1G-K

60ns

ES1M

100ns

ES1A-D

.975V

ES1G-K

1.35V

ES1M

1.60V

１　

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类似零件编号 - ES1J

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