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BF998 数据表(PDF) 1 Page - Siemens Semiconductor Group |
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BF998 数据表(HTML) 1 Page - Siemens Semiconductor Group |
1 / 8 page Semiconductor Group 1 04.96 Silicon N Channel MOSFET Tetrode BF 998 Features q Short-channel transistor with high S/C quality factor q For low-noise, gain-controlled input stages up to 1 GHz Maximum Ratings Type Marking Package1) Pin Configuration BF 998 Q62702-F1129 MO SOT-143 1 2 3 4 S D G2 G1 Ordering Code (tape and reel) Parameter Symbol Values Unit Drain-source voltage VDS 12 V Thermal Resistance Junction - soldering point Rth JS < 370 K/W Total power dissipation, TS < 76 ˚C Ptot 200 mW Storage temperature range Tstg – 55 … + 150 ˚C Gate 1/gate 2 peak source current ± IG1/2SM 10 Channel temperature Tch 150 mA Drain current ID 30 1) For detailed information see chapter Package Outlines. |
类似零件编号 - BF998 |
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类似说明 - BF998 |
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