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BCX71J 数据表(PDF) 3 Page - Siemens Semiconductor Group |
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BCX71J 数据表(HTML) 3 Page - Siemens Semiconductor Group |
3 / 9 page BCW 61 BCX 71 Semiconductor Group 3 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. V Collector-emitter breakdown voltage IC = 10 mA BCW 61, BCW 61 FF BCX 71 V(BR)CE0 32 45 – – – – nA nA µA µA Collector cutoff current VCB = 32 V BCW 61, BCW 61 FF VCB = 45 V BCX 71 VCB = 32 V, TA = 150 ˚C BCW 61, BCW 61 FF VCB = 45 V, TA = 150 ˚C BCX 71 ICB0 – – – – – – – – 20 20 20 20 Unit Values Parameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10 µA BCW 61, BCW 61 FF BCX 71 V(BR)CB0 32 45 – – – – Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 5–– – DC current gain 1) IC = 10 µA, VCE = 5 V BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K IC = 2 mA, VCE = 5 V BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K IC = 50 mA, VCE = 1 V BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K hFE 20 30 40 100 120 180 250 380 60 80 100 110 140 200 300 460 170 250 350 500 – – – – – – – – 220 310 460 630 – – – – nA Emitter cutoff current VEB = 4 V IEB0 ––20 1) Pulse test: t ≤ 300 µs, D ≤ 2%. |
类似零件编号 - BCX71J |
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类似说明 - BCX71J |
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