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SS8P3L 数据表(PDF) 3 Page - Vishay Siliconix |
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SS8P3L 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 5 page New Product SS8P2L, SS8P3L Vishay General Semiconductor Document Number: 89001 Revision: 24-Nov-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Figure 3. Typical Instantaneous Forward Characteristics 10 8 6 4 2 0 0 25 50 75 100 125 150 175 Lead Temperature (°C) Resistive or Inductive Load T L measured at the Cathode Band Terminal 0 1 2 3 4 5 0 1 2 3 4567 8 9 D = 0.1 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 1.0 Average Forward Current (A) D = t p/T t p T 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 T A = 150 °C T A = 125 °C T A = 25 °C Instantaneous Forward Voltage (V) Figure 4. Typical Reverse Leakage Characteristics Figure 5. Typical Junction Capacitance Figure 6. Typical Transient Thermal Impedance 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 T A = 150 °C T A = 125 °C T A = 25 °C Percent of Rated Peak Reverse Voltage (%) 100 1000 0.1 1 10 100 Reverse Voltage (V) T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Junction to Ambient 0.01 0.1 1 10 100 1 10 100 t - Pulse Duration (s) |
类似零件编号 - SS8P3L |
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类似说明 - SS8P3L |
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