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SIZ730DT-T1-GE3 数据表(PDF) 2 Page - Vishay Siliconix |
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SIZ730DT-T1-GE3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 14 page www.vishay.com 2 Document Number: 67648 S11-0609-Rev. A, 04-Apr-11 Vishay Siliconix SiZ730DT New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA Ch-1 30 V VGS = 0 V, ID = 250 µA Ch-2 30 VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA Ch-1 34 mV/°C ID = 250 µA Ch-2 32 VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Ch-1 - 5 ID = 250 µA Ch-2 - 5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Ch-1 1 2.2 V VDS = VGS, ID = 250 µA Ch-2 1 2.2 Gate Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Ch-1 ± 100 nA Ch-2 ± 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 1 µA VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 5 On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 10 V Ch-1 15 A VDS ≥ 5 V, VGS = 10 V Ch-2 20 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 15 A Ch-1 0.0075 0.0093 Ω VGS = 10 V, ID = 20 A Ch-2 0.0032 0.0039 VGS = 4.5 V, ID = 13 A Ch-1 0.0105 0.0130 VGS = 4.5 V, ID = 20 A Ch-2 0.0043 0.0053 Forward Transconductanceb gfs VDS = 15 V, ID = 15 A Ch-1 48 S VDS = 15 V, ID = 20 A Ch-2 80 Dynamica Input Capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Ch-1 830 pF Ch-2 2370 Output Capacitance Coss Ch-1 185 Ch-2 475 Reverse Transfer Capacitance Crss Ch-1 80 Ch-2 220 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 15 A Ch-1 15.6 24 nC VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 43 65 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-1 7.7 12 Ch-2 21.2 32 Gate-Source Charge Qgs Ch-1 2.6 Ch-2 7 Gate-Drain Charge Qgd Ch-1 3 Ch-2 7.4 Gate Resistance Rg f = 1 MHz Ch-1 0.2 1 2 Ω Ch-2 0.2 0.8 1.6 |
类似零件编号 - SIZ730DT-T1-GE3 |
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类似说明 - SIZ730DT-T1-GE3 |
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