SI8497DB-T2-E1 datasheet(2/9 Pages) VISHAY

部件名	SI8497DB-T2-E1

功能描述	P-Channel 30 V (D-S) MOSFET

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Document Number: 63355

S11-1385-Rev. A, 11-Jul-11

Vishay Siliconix

Si8497DB

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 85 °C/W.

c. Case is defined as top surface of the package.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

RthJA

37

45

°C/W

Maximum Junction-to-Case (Drain)c

Steady State

RthJC

79.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = - 250 µA

- 30

V

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 29

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

3.1

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.5

- 1.1

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 70 °C

- 10

On-State Drain Currenta

ID(on)

VDS - 5 V, VGS = - 4.5 V

- 5

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 1.5 A

0.043

0.053



VGS = - 2.5 V, ID = - 1 A

0.058

0.071

VGS = - 2 V, ID = - 0.5 A

0.075

0.120

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 1.5 A

10

S

Dynamicb

Input Capacitance

Ciss

VDS = - 15 V, VGS = 0 V, f = 1 MHz

1320

pF

Output Capacitance

Coss

121

Reverse Transfer Capacitance

Crss

102

Total Gate Charge

Qg

VDS = - 15 V, VGS = - 10 V, ID = - 1.5 A

32.6

49

nC

VDS = - 15 V, VGS = - 4.5 V, ID = - 1.5 A

16.3

25

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

4.9

Gate Resistance

Rg

VGS = - 0.1 V, f = 1 MHz

8



Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 10 

ID  - 1.5 A, VGEN = - 4.5 V, Rg = 1 

17

35

ns

Rise Time

tr

15

30

Turn-Off Delay Time

td(off)

60

120

Fall Time

tf

25

50

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 10 

ID  - 1.5 A, VGEN = - 10 V, Rg = 1 

50

100

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

75

150

Fall Time

tf

22

45

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