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SI8497DB 数据表(PDF) 5 Page - Vishay Siliconix |
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SI8497DB 数据表(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Document Number: 63355 S11-1385-Rev. A, 11-Jul-11 www.vishay.com 5 Vishay Siliconix Si8497DB This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 - 50 - 25 0 25 50 75 100 125 150 T J -Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 012345 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 1.5 A 0 5 10 15 20 25 30 Pulse (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 10 s 100 us 100 ms Limited by R DS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms 1 s DC |
类似零件编号 - SI8497DB |
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类似说明 - SI8497DB |
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