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SI8472DB 数据表(PDF) 2 Page - Vishay Siliconix |
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SI8472DB 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 63300 S11-1387-Rev. A, 11-Jul-11 Vishay Siliconix Si8472DB This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 190 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t = 10 s RthJA 55 70 °C/W Maximum Junction-to-Ambientc, d t = 10 s 125 160 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 16 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 2.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 0.9 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = 4.5 V 10 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 1.5 A 0.036 0.044 VGS = 2.5 V, ID = 1 A 0.041 0.050 VGS = 1.8 V, ID = 1 A 0.046 0.056 VGS = 1.5 V, ID = 0.5 A 0.050 0.070 Forward Transconductancea gfs VDS = 10 V, ID = 1.5 A 16 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 630 pF Output Capacitance Coss 105 Reverse Transfer Capacitance Crss 42 Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 1.5 A 12 18 nC VDS = 10 V, VGS = 4.5 V, ID = 1.5 A 6.8 11 Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.1 Gate Resistance Rg VGS = 0.1 V, f = 1 MHz 5.3 Turn-On Delay Time td(on) VDD = - 10 V, RL = 6.7 ID 1.5 A, VGEN = - 4.5 V, Rg = 1 715 ns Rise Time tr 15 30 Turn-Off Delay Time td(off) 30 60 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = - 10 V, RL = 6.7 ID - 1.5 A, VGEN = - 8 V, Rg = 1 510 Rise Time tr 15 30 Turn-Off Delay Time td(off) 30 60 Fall Time tf 10 20 |
类似零件编号 - SI8472DB |
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类似说明 - SI8472DB |
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