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SI7792DP-T1-GE3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI7792DP-T1-GE3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 13 page Vishay Siliconix Si7792DP www.vishay.com 4 Document Number: 67641 S11-0856-Rev. A, 02-May-11 New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0 25 50 75 100 125 150 TJ - Temperature (°C) 10 V 30 V 20 V 10-3 10-5 10-6 10-4 10-2 10-1 On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.002 0.004 0.006 0.008 0.010 02468 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 20 A 0 20 40 60 80 100 0.01 0.1 1 10 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 1 s Limited by R DS(on)* 10 ms I DM Limited T C = 25 °C Single Pulse BVDSS Limited 100 ms 1 ms 10 s DC I D Limited |
类似零件编号 - SI7792DP-T1-GE3 |
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类似说明 - SI7792DP-T1-GE3 |
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