SI7792DP-T1-GE3 datasheet(3/13 Pages) VISHAY

部件名	SI7792DP-T1-GE3

功能描述	N-Channel 30 V (D-S) MOSFET with Schottky Diode

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制造商	VISHAY [Vishay Siliconix]

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3 / 13 page

Document Number: 67641

S11-0856-Rev. A, 02-May-11

www.vishay.com

3

Vishay Siliconix

Si7792DP

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

16

32

48

64

80

0.0

0.5

1.0

1.5

2.0

2.5

V

DS - Drain-to-Source Voltage (V)

V

GS = 10 V thru 3 V

V

GS = 2 V

0.0015

0.0017

0.0019

0.0021

0.0023

0.0025

0

16

32

48

64

80

I

D -Drain Current (A)

V

GS = 4.5 V

V

GS = 10 V

0

2

4

6

8

10

0

19

38

57

76

95

Q

g - Total Gate Charge (nC)

V

DS = 15 V

V

DS = 10 V

V

DS = 20 V

I

D = 10 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

0.8

1.6

2.4

3.2

4.0

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = 125 °C

T

C = - 55 °C

0

1200

2400

3600

4800

6000

0

6

12

18

24

30

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 20 A

V

GS = 4.5 V

V

GS = 10 V

类似零件编号 - SI7792DP-T1-GE3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7790DP	345Kb / 13P	N-Channel 40-V (D-S) MOSFET Rev. A, 02-Jun-08
	SI7794DP	511Kb / 13P	N-Channel 30 V (D-S) MOSFET with Schottky Diode Rev. A, 13-Jun-11
	SI7794DP-T1-GE3	511Kb / 13P	N-Channel 30 V (D-S) MOSFET with Schottky Diode Rev. A, 13-Jun-11

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类似说明 - SI7792DP-T1-GE3

制造商	部件名	数据表	功能描述
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