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SI7720DN-T1-GE3 数据表(PDF) 5 Page - Vishay Siliconix |
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SI7720DN-T1-GE3 数据表(HTML) 5 Page - Vishay Siliconix |
5 / 14 page Document Number: 68787 S-81716-Rev. A, 04-Aug-08 www.vishay.com 5 Vishay Siliconix Si7720DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current (Schottky) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) 30 V 10 V 20 V 10-6 10-3 10-1 10-5 10-4 10-2 On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C ID =10A 0 30 60 90 120 150 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s DC 10 s BVDSS Limited |
类似零件编号 - SI7720DN-T1-GE3 |
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类似说明 - SI7720DN-T1-GE3 |
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