SI7629DN datasheet(2/13 Pages) VISHAY

部件名	SI7629DN

功能描述	P-Channel 20 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 70556

S10-1538-Rev. A, 19-Jul-10

Vishay Siliconix

Si7629DN

New Product

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 13

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

3.7

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.4

- 1.5

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS - 5 V, VGS = - 10 V

- 30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 20 A

0.0038

0.0046



VGS = - 4.5 V, ID = - 15 A

0.0051

0.0062

VGS = - 2.5 V, ID = - 10 A

0.0097

0.0117

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 20 A

64

S

Dynamicb

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

5790

pF

Output Capacitance

Coss

700

Reverse Transfer Capacitance

Crss

705

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 10 V, ID = - 10 A

118

177

nC

VDS = - 10 V, VGS = - 4.5 V, ID = - 10 A

59

88

Gate-Source Charge

Qgs

9.2

Gate-Drain Charge

Qgd

17.1

Gate Resistance

Rg

f = 1 MHz

0.4

2.2

4



Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1 

ID  - 10 A, VGEN = - 4.5 V, Rg = 1 

35

60

ns

Rise Time

tr

38

65

Turn-Off Delay Time

td(off)

75

130

Fall Time

tf

28

55

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1 

ID  - 10 A, VGEN = - 10 V, Rg = 1 

13

25

Rise Time

tr

816

Turn-Off Delay Time

td(off)

80

150

Fall Time

tf

10

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 35

A

Pulse Diode Forward Current

ISM

- 80

Body Diode Voltage

VSD

IS = - 4 A, VGS = 0 V

- 0.70

- 1.1

V

Body Diode Reverse Recovery Time

trr

IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C

36

55

ns

Body Diode Reverse Recovery Charge

Qrr

25

40

nC

Reverse Recovery Fall Time

ta

15

ns

Reverse Recovery Rise Time

tb

21

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