SI7415DN datasheet(2/4 Pages) VISHAY

部件名	SI7415DN

功能描述	P-Channel 60-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Vishay Siliconix

SPICE Device Model Si7415DN

www.vishay.com

Document Number: 71730

S-52517

Rev. B, 12-Dec-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

2.1

V

On-State Drain Current

a

ID(on)

VDS < −5 V, VGS = −10 V

88

A

VGS = −10 V, ID = −5.7 A

0.053

0.054

Drain-Source On-State Resistance

a

rDS(on)

VGS = −4.5 V, ID = −4.4 A

0.084

0.090

Ω

Forward Transconductance

a

gfs

VDS = −15 V, ID = −5.7 A

11

S

Diode Forward Voltage

a

VSD

IS = −3.2 A, VGS = 0 V

−0.82

−0.80

V

Dynamic

b

Total Gate Charge

Qg

15.4

15

Gate-Source Charge

Qgs

4

Gate-Drain Charge

Qgd

VDS = −30 V, VGS = −10 V, ID = −5.7 A

3.2

nC

Turn-On Delay Time

td(on)

9

12

Rise Time

tr

12

Turn-Off Delay Time

td(off)

19

22

Fall Time

tf

VDD = −30 V, RL = 30 Ω

ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω

32

16

ns

Source-Drain Reverse Recovery Time

trr

IF = −3.2 A, di/dt = 100 A/µs

31

45

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

类似零件编号 - SI7415DN

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7415DN	48Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. A, 22-Oct-01
	SI7415DN	551Kb / 11P	P-Channel 60-V (D-S) MOSFET Rev. E, 22-Dec-08
	SI7415DN-T1-E3	555Kb / 11P	P-Channel 60-V (D-S) MOSFET Rev. E, 22-Dec-08
	SI7415DN-T1-GE3	555Kb / 11P	P-Channel 60-V (D-S) MOSFET Rev. E, 22-Dec-08
	SI7415DN-T1-GE3	624Kb / 12P	P-Channel 60 V (D-S) MOSFET 01-Jan-2022

More results

类似说明 - SI7415DN

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