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SI7102DN-T1-GE3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI7102DN-T1-GE3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 14 page Document Number: 74250 S-83044-Rev. B, 22-Dec-08 www.vishay.com 3 Vishay Siliconix Si7102DN Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 35 A Pulse Diode Forward Currenta ISM 60 Body Diode Voltage VSD IS = 3.2 A 0.61 1.2 V Body Diode Reverse Recovery Time trr IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C 46 70 ns Body Diode Reverse Recovery Charge Qrr 30 50 nC Reverse Recovery Fall Time ta 20 ns Reverse Recovery Rise Time tb 26 |
类似零件编号 - SI7102DN-T1-GE3 |
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类似说明 - SI7102DN-T1-GE3 |
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