SI6562CDQ datasheet(2/17 Pages) VISHAY

部件名	SI6562CDQ

功能描述	N- and P-Channel 20-V (D-S) MOSFETs

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Document Number: 68954

S-82575-Rev. A, 27-Oct-08

Vishay Siliconix

Si6562CDQ

New Product

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

N-Ch

20

V

VGS = 0 V, ID = - 250 µA

P-Ch

- 20

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

N-Ch

22

mV/°C

ID = - 250 µA

P-Ch

- 21

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

N-Ch

- 3.5

ID = - 250 µA

P-Ch

3.5

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

1.5

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.6

- 1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

N-Ch

± 100

nA

P-Ch

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

1

µA

VDS = - 20 V, VGS = 0 V

P-Ch

- 1

VDS = 20 V, VGS = 0 V, TJ = 55 °C

N-Ch

10

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

N-Ch

30

A

VDS ≤ - 5 V, VGS = - 4.5 V

P-Ch

- 30

Drain-Source On-State Resistanceb

RDS(on)

VGS = 4.5 V, ID = 5.7 A

N-Ch

0.018

0.022

Ω

VGS = - 4.5 V, ID = - 5.1 A

P-Ch

0.024

0.030

VGS = 2.5 V, ID = 4.4 A

N-Ch

0.029

0.036

VGS = - 2.5 V, ID = - 4.2 A

P-Ch

0.036

0.045

Forward Transconductanceb

gfs

VDS = 10 V, ID = 5.7 A

N-Ch

17

S

VDS = - 10 V, ID = - 5.1 A

P-Ch

22

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 10 V, VGS = 0 V, f = 1 MHz

P-Channel

VDS = - 10 V, VGS = 0 V, f = 1 MHz

N-Ch

850

pF

P-Ch

1200

Output Capacitance

Coss

N-Ch

150

P-Ch

260

Reverse Transfer Capacitance

Crss

N-Ch

70

P-Ch

45

Total Gate Charge

Qg

VDS = 10 V, VGS = 10 V, ID = 5.7 A

N-Ch

15

23

nC

VDS = - 10 V, VGS = - 10 V, ID = - 5.1 A

P-Ch

34

51

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 5.7 A

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1 A

N-Ch

6.7

11

P-Ch

17

30

Gate-Source Charge

Qgs

N-Ch

1.8

P-Ch

3

Gate-Drain Charge

Qgd

N-Ch

0.9

P-Ch

5.5

Gate Resistance

Rg

f = 1 MHz

N-Ch

2

Ω

P-Ch

6

类似零件编号 - SI6562CDQ

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