SI5902BDC-T1-GE3 datasheet(5/7 Pages) VISHAY

部件名	SI5902BDC-T1-GE3

功能描述	Dual N-Channel 30 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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5 / 7 page

Document Number: 70415

S10-0548-Rev. B, 08-Mar-10

www.vishay.com

5

Vishay Siliconix

Si5902BDC

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

1

2

3

4

5

6

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Package Limited

Power Derating

0

1

2

3

4

25

50

75

100

125

150

TC - Case Temperature (°C)

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