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BAW78M 数据表(PDF) 1 Page - Siemens Semiconductor Group |
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BAW78M 数据表(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page BAW 78M Semiconductor Group Jul-27-1998 1 Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage VPW05980 1 2 3 5 4 Type Marking Ordering Code Pin Configuration Package BAW 78M GDs Q62702-A3471 1 = A 2 = C 3 n.c. SCT-595 4 n.c. 5 = C Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 400 V Peak reverse voltage VRM 400 Forward current IF 1 A Peak forward current IFM 1 Surge forward current, t = 1 µs IFS 10 Total power dissipation, TS ≤ 110 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg - 65 ...+150 Thermal Resistance Junction - ambient 1) RthJA ≤ 95 K/W Junction - soldering point RthJS ≤ 40 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 1998-11-01 |
类似零件编号 - BAW78M |
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类似说明 - BAW78M |
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