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SI4670DY 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI4670DY
功能描述  Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI4670DY 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 69595
S09-2109-Rev. C, 12-Oct-09
Vishay Siliconix
Si4670DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
Ch-1
25
V
VGS = 0 V, ID = 250 µA
Ch-2
25
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
Ch-1
25
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
ID = 250 µA
Ch-1
- 4.7
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Ch-1
1
2.2
V
VDS = VGS, ID = 250 µA
Ch-2
1
2.2
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Ch-1
100
nA
VDS = 0 V, VGS = ± 16 V
Ch-2
100
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
Ch-1
0.001
mA
VDS = 25 V, VGS = 0 V
Ch-2
0.07
0.5
VDS = 25 V, VGS = 0 V, TJ = 100 °C
Ch-1
0.025
VDS = 25 V, VGS = 0 V, TJ = 100 °C
Ch-2
5
20
On-State Drain Currentb
ID(on)
VDS ≥ 5 V, VGS = 10 V
Ch-1
20
A
VDS ≥ 5 V, VGS = 10 V
Ch-2
20
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 7 A
Ch-1
0.019
0.023
Ω
VGS = 10 V, ID = 7 A
Ch-2
0.019
0.023
VGS = 4.5 V, ID = 6.3 A
Ch-1
0.023
0.028
VGS = 4.5 V, ID = 6.3 A
Ch-2
0.023
0.028
Forward Transconductanceb
gfs
VDS = 10 V, ID = 7 A
Ch-1
23
S
VDS = 10 V, ID = 7 A
Ch-2
23
Dynamica
Input Capacitance
Ciss
Channel-1
VDS = 13 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 13 V, VGS = 0 V, f = 1 MHz
Ch-1
680
pF
Ch-2
680
Output Capacitance
Coss
Ch-1
120
Ch-2
180
Reverse Transfer Capacitance
Crss
Ch-1
55
Ch-2
70
Total Gate Charge
Qg
VDS = 13 V, VGS = 10 V, ID = 7 A
Ch-1
12
18
nC
VDS = 13 V, VGS = 10 V, ID = 7 A
Ch-2
12
18
Channel-1
VDS = 13 V, VGS = 4.5 V, ID = 7 A
Channel-2
VDS = 13 V, VGS = 4.5 V, ID = 7 A
Ch-1
5.5
8.5
Ch-2
5.5
8.5
Gate-Source Charge
Qgs
Ch-1
2
Ch-2
2
Gate-Drain Charge
Qgd
Ch-1
1.5
Ch-2
1.5
Gate Resistance
Rg
f = 1 MHz
Ch-1
2.5
Ω
Ch-2
3.2


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