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SI4599DY 数据表(PDF) 5 Page - Vishay Siliconix |
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SI4599DY 数据表(HTML) 5 Page - Vishay Siliconix |
5 / 15 page Document Number: 68971 S-82619-Rev. A, 03-Nov-08 www.vishay.com 5 Vishay Siliconix Si4599DY New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =5mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.04 0.08 0.12 0.16 0.20 0 246 8 10 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID =5A 0 32 48 64 80 0 1 1 1 0 0 . 00.01 Time (s) 0.1 16 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 100 1 0.1 1 10 100 0.01 10 1ms 0.1 TA = 25 °C Single Pulse DC 1s 10 s Limited byR DS(on)* 10 ms 100 ms |
类似零件编号 - SI4599DY |
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类似说明 - SI4599DY |
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