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SI4511DY-T1-GE3 数据表(PDF) 6 Page - Vishay Siliconix |
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SI4511DY-T1-GE3 数据表(HTML) 6 Page - Vishay Siliconix |
6 / 12 page www.vishay.com 6 Document Number: 72223 S09-0867-Rev. E, 18-May-09 Vishay Siliconix Si4511DY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 8 16 24 32 40 0.0 0.4 0.8 1.2 1.6 2.0 VGS = 5 V thru 3.5 V VDS - Drain-to-Source Voltage (V) 2.5 V 2 V 3 V 1.5 V 0.00 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 ID - Drain Current (A) VGS = 4.5 V VGS = 2.5 V 0 1 2 3 4 5 0 3 6 9 12 15 18 VDS = 10 V ID = 6.2 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 TC = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) 0 500 1000 1500 2000 2500 3000 04 8 12 16 20 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 6.2 A TJ - Junction Temperature (°C) |
类似零件编号 - SI4511DY-T1-GE3 |
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类似说明 - SI4511DY-T1-GE3 |
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