SI4511DY-T1-E3 datasheet(1/12 Pages) VISHAY

部件名	SI4511DY-T1-E3

功能描述	N- and P-Channel 20-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si4511DY

Document Number: 72223

S09-0867-Rev. E, 18-May-09

www.vishay.com

1

N- and P-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Compliant to RoHS directive 2002/95/EC

APPLICATIONS

•

Level Shift

•

Load Switch

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

N-Channel

20

0.0145 at VGS = 10 V

9.6

0.017 at VGS = 4.5 V

8.6

P-Channel

- 20

0.033 at VGS = - 4.5 V

- 6.2

0.050 at VGS = - 2.5 V

- 5

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4511DY

-T1-E3 (Lead (Pb)-free)

Si4511DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

S2

G2

G1

S1

D2

D1

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t

≤ 10 s.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

10 s

Steady State

10 s

Steady State

Drain-Source Voltage

VDS

20

- 20

V

Gate-Source Voltage

VGS

± 16

± 12

Continuous Drain Current (TJ = 150 °C)

a, b

TA = 25 °C

ID

9.6

7.2

- 6.2

- 4.6

A

TA = 70 °C

7.7

5.8

- 4.9

- 3.7

Pulsed Drain Current

IDM

40

- 40

Continuous Source Current (Diode Conduction)a

IS

1.7

0.9

- 1.7

- 0.9

Maximum Power Dissipationa

TA = 25 °C

PD

2

1.1

2

1.1

W

TA = 70 °C

1.3

0.7

1.3

0.7

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

50

62.5

50

62.5

°C/W

Steady State

85

110

90

110

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

30

40

30

35

类似零件编号 - SI4511DY-T1-E3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4511DY-T1-E3	77Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 09-Aug-04

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