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SI4497DY-T1-GE3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI4497DY-T1-GE3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 65748 S10-0639-Rev. A, 22-Mar-10 Vishay Siliconix Si4497DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.004 0.008 0.012 0.016 0.020 02 4 6 8 10 TJ =25 °C ID =20A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 40 80 120 160 200 10 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area 0.01 100 1 100 0.01 0.1 1ms 10 s 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse DC BVDSS Limited 1s 100 ms Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified |
类似零件编号 - SI4497DY-T1-GE3 |
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类似说明 - SI4497DY-T1-GE3 |
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