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SI4288DY 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI4288DY
功能描述  Dual N-Channel 40 V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI4288DY 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Vishay Siliconix
Si4288DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
40
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
49
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 5.2
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID= 250 µA
1.2
2.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 10 A
0.0165
0.0200
VGS = 4.5 V, ID = 7 A
0.019
0.023
Forward Transconductanceb
gfs
VDS = 15 V, ID = 10 A
35
S
Dynamica
Input Capacitance
Ciss
VDS = 20 V, VGS = 0 V, ID = 1 MHz
580
pF
Output Capacitance
Coss
100
Reverse Transfer Capacitance
Crss
42
Total Gate Charge
Qg
VDS = 20 V, VGS = 10 V, ID = 10 A
10
15
nC
VDS = 20 V, VGS = 4.5 V, ID = 10 A
4.9
7.4
Gate-Source Charge
Qgs
1.5
Gate-Drain Charge
Qgd
1.5
Gate Resistance
Rg
f = 1 MHz
0.6
2.7
5.4
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 10 V, Rg = 1 
714
ns
Rise Time
tr
918
Turn-Off Delay Time
td(off)
16
32
Fall Time
tf
816
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 2 
ID  10 A, VGEN = 4.5 V, Rg = 1 
12
24
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
13
26
Fall Time
tf
816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
2.6
A
Pulse Diode Forward Currenta
ISM
50
Body Diode Voltage
VSD
IS = 3 A
0.77
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
15
30
ns
Body Diode Reverse Recovery Charge
Qrr
7.5
15
nC
Reverse Recovery Fall Time
ta
9
ns
Reverse Recovery Rise Time
tb
6


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