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SI4110DY-T1-GE3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI4110DY-T1-GE3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 68766 S-81713-Rev. A, 04-Aug-08 www.vishay.com 3 Vishay Siliconix Si4110DY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 12 24 36 48 60 0 246 8 10 VDS - Drain-to-Source Voltage (V) VGS =10thru 4 V VGS =6 V VGS =5 V 0.009 0.010 0.011 0.012 0.013 0.014 0 12243648 60 ID - Drain Current (A) VGS =10 V 0 2 4 6 8 10 010 20 30 40 Qg - Total Gate Charge (nC) ID =11.7A VDS =64 V VDS =40 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0123 456 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 600 1200 1800 2400 3000 020 40 60 80 Ciss VDS - Drain-to-Source Voltage (V) Coss Crss 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) VGS =10 V ID =11.7A |
类似零件编号 - SI4110DY-T1-GE3 |
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类似说明 - SI4110DY-T1-GE3 |
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