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SI3590DV-T1-GE3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI3590DV-T1-GE3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 72032 S09-1927-Rev. C, 28-Sep-09 Vishay Siliconix Si3590DV N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted Source-Drain Diode Forward Voltage Threshold Voltage 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.05 0.10 0.15 0.20 0.25 0 1234 5 VGS - Gate-to-Source Voltage (V) ID = 3 A 0.01 0 1 6 8 2 4 10 30 0.1 Time (s) Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 TC = 25 °C Single Pulse 10 ms 100 ms DC 100 µs IDM Limited ID(on) Limited BVDSS Limited 10 s, 1 s VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* |
类似零件编号 - SI3590DV-T1-GE3 |
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类似说明 - SI3590DV-T1-GE3 |
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