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SI3590DV-T1-GE3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI3590DV-T1-GE3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 72032 S09-1927-Rev. C, 28-Sep-09 www.vishay.com 3 Vishay Siliconix Si3590DV N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 1 2 3 4 5 6 7 8 0 1234 5 VGS = 5 V thru 2.5 V 1.5 V VDS - Drain-to-Source Voltage (V) 2 V 0.0 0.1 0.2 0.3 0.4 0.5 0 2468 10 VGS = 4.5 V VGS = 2.5 V ID - Drain Current (A) 0 1 2 3 4 5 6 0 1234 5 VDS = 15 V ID = 2 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 0 90 180 270 360 450 0 6 12 18 24 30 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 3 A TJ - Junction Temperature (°C) |
类似零件编号 - SI3590DV-T1-GE3 |
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类似说明 - SI3590DV-T1-GE3 |
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