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SI3588DV-T1-GE3 数据表(PDF) 6 Page - Vishay Siliconix |
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SI3588DV-T1-GE3 数据表(HTML) 6 Page - Vishay Siliconix |
6 / 12 page www.vishay.com 6 Document Number: 71332 S09-2275-Rev. B, 02-Nov-09 Vishay Siliconix Si3588DV P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 0 1 2 3 4 5 0 1234 5 Qg - Total Gate Charge (nC) VDS = 10 V ID = 2.2 A 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 2.2 A TJ - Junction Temperature (°C) 0.0 0.1 0.2 0.3 0.4 0.5 0 1234 5 VGS - Gate-to-Source Voltage (V) ID = 2.2 A 0.01 0 1 6 8 2 4 10 30 0.1 Time (s) |
类似零件编号 - SI3588DV-T1-GE3 |
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类似说明 - SI3588DV-T1-GE3 |
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