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SI3458BDV 数据表(PDF) 4 Page - Vishay Siliconix |
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SI3458BDV 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 69501 S09-0660-Rev. B, 20-Apr-09 Vishay Siliconix Si3458BDV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) 1 TJ = 25 °C 100 1.25 1.50 1.75 2.00 2.25 2.50 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) VGS - Gate-to-Source Voltage (V) 0.05 0.10 0.15 0.20 0.25 0246 8 10 125 °C 25 °C ID = 3.2 A 0 5 10 15 20 25 30 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified BVDSS Limited 100 Limited by RDS(on)* 100 µs 1 ms 10 ms 100 ms 1 s, 10 s DC |
类似零件编号 - SI3458BDV |
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类似说明 - SI3458BDV |
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