SI2304DDS datasheet(1/10 Pages) VISHAY

部件名	SI2304DDS

功能描述	N-Channel 30-V (D-S) MOSFET

Download	10 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

1 / 10 page

Vishay Siliconix

Si2304DDS

New Product

Document Number: 65175

S09-1496-Rev. A, 10-Aug-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

30

0.060 at VGS = 10 V

3.6

2.1 nC

0.075 at VGS = 4.5 V

3.6

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2304DDS (P4)*

* Marking Code

Ordering Information: Si2304DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 130 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

3.6a

A

TC = 70 °C

3.3

TA = 25 °C

3.3

TA = 70 °C

2.7

Pulsed Drain Current

IDM

15

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.4

TA = 25 °C

0.9b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.7

W

TC = 70 °C

1.1

TA = 25 °C

1.1b, c

TA = 70 °C

0.7b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

90

115

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

类似零件编号 - SI2304DDS

制造商	部件名	数据表	功能描述
Vishay Telefunken	SI2304DDS	242Kb / 10P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI2304DDS	206Kb / 9P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI2304DDS-T1-GE3	206Kb / 9P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI2304DDS-T1-GE3	487Kb / 9P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI2304DDS	206Kb / 9P	N-Channel 30 V (D-S) MOSFET 01-Jan-2022

More results

类似说明 - SI2304DDS

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12