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SI1403CDL 数据表(PDF) 2 Page - Vishay Siliconix |
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SI1403CDL 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com Document Number: 67485 2 S11-0396-Rev. A, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si1403CDL Vishay Siliconix Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS SIMULATED DATA MEASURED DATA UNIT Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA 1 - V Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 1.6 A 0.116 0.116 VGS = - 2.5 V, ID = - 0.5 A 0.175 0.177 Forward Transconductancea gfs VDS = - 10 V, ID = - 1.6 A 5 5 S Diode Forward Voltage VSD IS = - 1.3 A - 0.82 - 0.83 V Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 281 281 pF Output Capacitance Coss 74 73 Reverse Transfer Capacitance Crss 54 54 Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 1.6 A 34 nC Gate-Source Charge Qgs 0.7 0.7 Gate-Drain Charge Qgd 1.4 1.4 |
类似零件编号 - SI1403CDL |
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类似说明 - SI1403CDL |
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