SI1012R-T1-GE3 datasheet(2/10 Pages) VISHAY

部件名	SI1012R-T1-GE3

功能描述	N-Channel 1.8 V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 71166

S10-2432-Rev. D, 25-Oct-10

Vishay Siliconix

Si1012R/X

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.45

0.9

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 0.5

± 1.0

µA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

0.3

100

nA

VDS = 20 V, VGS = 0 V, TJ = 85 °C

5µA

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

700

mA

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 600 mA

0.41

0.70



VGS = 2.5 V, ID = 500 mA

0.53

0.85

VGS = 1.8 V, ID = 350 mA

0.70

1.25

Forward Transconductancea

gfs

VDS = 10 V, ID = 400 mA

1.0

S

Diode Forward Voltagea

VSD

IS = 150 mA, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 250 mA

750

pC

Gate-Source Charge

Qgs

75

Gate-Drain Charge

Qgd

225

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 47 

ID  200 mA, VGEN = 4.5 V, Rg = 10 

5

ns

Rise Time

tr

5

Turn-Off Delay Time

td(off)

25

Fall Time

tf

11

类似零件编号 - SI1012R-T1-GE3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI1012R-T1-GE3	108Kb / 6P	N-Channel 1.8-V (G-S) MOSFET Rev. C, 07-Jul-08
	Si1012R-T1-GE3	172Kb / 8P	N-Channel 1.8 V (G-S) MOSFET Rev. E, 15-Apr-13
	SI1012R-T1-GE3	170Kb / 8P	N-Channel 1.8 V (G-S) MOSFET 01-Jan-2022

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类似说明 - SI1012R-T1-GE3

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