SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G

Document Number 81142

Rev. 1.1, 13-May-11

Vishay Semiconductors

www.vishay.com

1

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This document is subject to change without notice.

Small Signal Schottky Diodes

Features

• The SD103 series is a metal-on-silicon

Schottky

barrier

device

which

is

protected by a PN junction guard ring

• The low forward voltage drop and fast

switching make it ideal for protection of

MOS devices, steering, biasing, and

coupling diodes for fast switching and

low logic level applications

• Other

applications

are

click

suppression,

efficient full wave bridges in telephone subsets,

and blocking diodes in rechargeable low voltage

battery systems

• For general purpose applications

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Mechanical Data

Case: SOD-323

Weight: approx. 4.0 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

Parts Table

Absolute Maximum Ratings

Note

Thermal Characteristics

Note

20145

Part

Ordering code

Type marking

Remarks

SD103AWS-V-G

SD103AWS-V-G-18 or SD103AWS-V-G-08

Z6

Tape and reel

SD103BWS-V-G

SD103BWS-V-G-18 or SD103BWS-V-G-08

Z7

Tape and reel

SD103CWS-V-G

SD103CWS-V-G-18 or SD103CWS-V-G-08

Z8

Tape and reel

Parameter

Test condition

Part

Symbol

Value

Unit

Peak reverse voltage

SD103AWS-V-G

40

V

SD103BWS-V-G

30

V

SD103CWS-V-G

20

V

Forward continuous current

mA

Single cycle surge

10 µs square wave

2A

Power dissipation

mW

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

K/W

Junction temperature

125

°C

Storage temperature range

- 55 to + 150

°C