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BAT114-099 数据表(PDF) 2 Page - Siemens Semiconductor Group |
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BAT114-099 数据表(HTML) 2 Page - Siemens Semiconductor Group |
2 / 3 page BAT 114-099 Semiconductor Group 327 Thermal Resistance (per diode) Parameter Symbol Limit Values Unit Junction to soldering point R thJS ≤ 780 K/W Junction to ambient1) R thJA ≤ 1020 K/W 1) Mounted on alumina 15 mm × 16.7 mm to 0.7 mm Electrical Characteristics (per diode; T A = 25 °C) Parameter Symbol Limit Values Unit min. typ. max. Breakdown voltage I R = 5 µA V BR 4 −− V Forward voltage I F = 1 mA I F = 10 mA V F − − 0.6 0.7 0.7 0.8 V Forward voltage matching1) I F = 10 mA ∆V F −− 10 mV Diode capacitance V R = 0 V, f = 1 MHz C T − 0.25 0.5 pF Forward resistance I F = 10 mA / 50 mA R F − 5.5 − Ω 1) ∆V F is difference between lowest and highest VF in component. |
类似零件编号 - BAT114-099 |
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类似说明 - BAT114-099 |
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