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BAS16W 数据表(PDF) 1 Page - Siemens Semiconductor Group |
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BAS16W 数据表(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 Nov-28-1996 BAS 16W Silicon Switching Diode • For high speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16W A6s Q62702-A1050 1 = A 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 75 V Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 Total Power dissipation TS ≤ 119 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction ambient 1) RthJA ≤ 260 K/W Junction - soldering point RthJS ≤ 125 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu |
类似零件编号 - BAS16W |
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类似说明 - BAS16W |
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