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MJ10003 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 MJ10003
功能描述  isc Silicon NPN Darlington Power Transistor
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

MJ10003 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
MJ10003
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min.)
·High Switching Speed
APPLICATIONS
Designed for high voltage, high speed , power switching in
Inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications as:
·Switching Regulators
·Inverters
·Solenoid and Relay Drivers
·Motor Controls
·Deflection Circuits
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO(SUS)
Collector-Emitter Voltage
400
V
VCEX(SUS)
Collector-Emitter Voltage
450
V
VCEV
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continunous
10
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current-Continunous
2.5
A
PC
Collector Power Dissipation
@TC=25℃
150
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.17
℃/W
isc Website：www.iscsemi.cn


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