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FC40SA50FK 数据表(PDF) 1 Page - Vishay Siliconix |
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FC40SA50FK 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Document Number: 94542 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 12-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Power MOSFET, 40 A FC40SA50FKP Vishay Semiconductors FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current •Low RDS(on) • Fully insulated package • UL pending • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) (2) ISD ≤ 40 A, dI/dt ≤ 150 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C Notes (1) Starting TJ = 25 °C, L = 1.55 mH, Rg = 25 Ω, IAS = 40 A, dV/dt = 5.5 V/ns (see fig. 12a) (2) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) PRODUCT SUMMARY VDSS 500 V RDS(on) (typical) 0.084 Ω ID 40 A Type Modules - MOSFET Package SOT-227 SOT-227 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Continuous drain current, VGS at 10 V ID TC = 25 °C 40 A TC = 100 °C 26 Pulsed drain current IDM (1) 160 Power dissipation PD TC = 25 °C 430 W Linear derating factor 3.45 W/°C Gate to source voltage VGS ± 30 V Peak diode recovery dV/dt dV/dt (2) 9.0 V/ns Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C AVALANCHE CHARACTERISTICS PARAMETER SYMBOL TYP. MAX. UNITS Single pulse avalanche energy EAS (1) - 1240 mJ Avalanche current IAR (2) -40 A Repetitive avalanche energy EAR (2) -43 mJ |
类似零件编号 - FC40SA50FK |
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类似说明 - FC40SA50FK |
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