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2SD1825 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1825 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1825 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 70 V V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ 60 V VCEsat Collector-emitter saturation voltage IC=2A ; IB=4mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A ; IB=4mA 2.0 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=2V 2000 5000 fT Transition frequency IC=2A ; VCE=5V 20 MHz Switching times ton Turn-on time 0.6 μs ts Storage time 2.7 μs tf Fall time IC=2A; IB1=-IB2=4mA VCC=20V ,RL=10Ω 1.6 μs |
类似零件编号 - 2SD1825 |
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类似说明 - 2SD1825 |
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