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2SD1271A 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1271A 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 5 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1271 2SD1271A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1271 80 VCEO Collector-emitter voltage 2SD1271A IC=10mA , IB=0 100 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.25A 0.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.25A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=3A ; VCE=2V 60 260 fT Transition frequency IC=0.5A ; VCE=10V 30 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 1.5 μs tf Fall time IC=3A ;IB1=-IB2=0.3A VCC=50V 0.1 μs hFE-2 Classifications R Q P 60-120 90-180 130-260 |
类似零件编号 - 2SD1271A |
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类似说明 - 2SD1271A |
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