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2SC4511 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4511 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4511 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 80 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 0.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=2A ; VCE=4V 50 180 COB Output capacitance IE=0; VCB=10V;f=1MHz 110 pF fT Transition frequency IE=-0.5A ; VCE=12V 20 MHz Switching times ton Turn-on time 0.16 μs ts Storage time 2.60 μs tf Fall time IC=3.0A IB1=-IB2=0.3A VCC=30V ,RL=10Ω 0.34 μs hFE Classifications O P Y 50-100 70-140 90-180 |
类似零件编号 - 2SC4511 |
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类似说明 - 2SC4511 |
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