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2SC3284 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3284 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3284 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 150 V VCEsat Collector-emitter saturation voltage IC=5A IB=0.5A 2.0 V ICBO Collector cut-off current VCB=150V IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V 50 180 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 200 pF fT Transition frequency IE=-2A ; VCE=12V 60 MHz Switching times ton Turn-on time 0.20 μs ts Storage time 1.50 μs tf Fall time IC=5A;RL=12Ω IB1=- IB2=0.5A VCC=60V 0.35 μs hFE Classifications O P Y 50-100 70-140 90-180 |
类似零件编号 - 2SC3284 |
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类似说明 - 2SC3284 |
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