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2SC2716 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2716 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION ·High Power Gain- : Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V ICM Collector Current 6 A Collector Power Dissipation @TC=25℃ 20 PC Collector Power Dissipation @Ta=25℃ 1.7 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
类似零件编号 - 2SC2716 |
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类似说明 - 2SC2716 |
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