STD16N65M5 datasheet(4/19 Pages) STMICROELECTRONICS

部件名	STD16N65M5

功能描述	N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in D짼PAK, DPAK

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制造商	STMICROELECTRONICS [STMicroelectronics]

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4 / 19 page

Electrical characteristics

STB16N65M5, STD16N65M5

4/19

Doc ID 18146 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

nA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 6 A

0.230

0.279

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

1250

30

3

-

pF

Co(tr)

(1)

1.

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Equivalent

capacitance time

-100

-

pF

Co(er)

(2)

2.

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Equivalent

capacitance energy

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

2

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 6 A,

VGS = 10 V

(see

Figure 18)

-

31

8

12

-

nC

类似零件编号 - STD16N65M5

制造商	部件名	数据表	功能描述
STMicroelectronics	STD16N65M5	1Mb / 19P	N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK
Inchange Semiconductor ...	STD16N65M5	308Kb / 2P	isc N-Channel Mosfet Transistor

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类似说明 - STD16N65M5

制造商	部件名	数据表	功能描述
STMicroelectronics	STP16N65M5	1Mb / 19P	N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK
	STB18N65M5	1,021Kb / 18P	N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages
	STD18N65M5	1,021Kb / 18P	N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages
	STW16N65M5	1Mb / 20P	N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247
	STD18N55M5	1Mb / 22P	N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220
	STB8N65M5	1Mb / 25P	N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET
	STB50N25M5	903Kb / 14P	N-channel 250 V, 0.065 廓, 28 A, MDmesh V Power MOSFET in DPAK package
	STP32N65M5	1Mb / 22P	N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247
	STY112N65M5	856Kb / 12P	N-channel 650 V, 0.019 廓, 96 A, MDmesh??V Power MOSFET in Max247 package
	STW35N65M5	1Mb / 22P	N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

More results

STD16N65M5 数据表(PDF) 4 Page - STMicroelectronics

STD16N65M5 数据表(HTML) 4 Page - STMicroelectronics

类似零件编号 - STD16N65M5

类似说明 - STD16N65M5

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