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2N4401 数据表(PDF) 1 Page - Diotec Semiconductor |
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2N4401 数据表(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 2N4401 2N4401 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN Version 2006-09-12 Dimensions - Maße [mm] Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 2N4401 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 40 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 60 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6 V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 150 mA, VCE = 1 V IC = 500 mA, VCE = 2 V hFE hFE hFE hFE hFE 20 40 80 100 40 – – – – – – – – 300 – Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat VCEsat – – – – 0.40 V 0.75 V Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat VBEsat 0.75 V – – – 0.95 V 1.2 V 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2 x 2.54 C BE |
类似零件编号 - 2N4401 |
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类似说明 - 2N4401 |
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